mitsubishi rf power module M68772 silicon mos fet power amplifier, 890- 915 mhz 13w fm mobile h11 outl i ne dr aw i ng p i n: p in : rf i nput v gg : gate b i as supply v dd : dra i n b i as supply p o : rf output gnd : f in d i m ens i ons in mm 1 2 3 4 5 block d i agram 4 5 3 2 1 8 .3 + /-1 43 .3 + /-1 21 .3 + /-1 50 . 2+ /-1 51 .3 + /-1 60 .5 + /-1 57 .5 + /- 0 .5 1 2 3 4 5 0 . 45 + /- 0 .2 2 - r1 .6 +0 .2 0 11+ /-0.5 14+ /-0.5 10+ /-1 3 . 4+0 .8 -0.4 2 . 3+ /- 0 .3 (6.4) maximum ratings (tc=25deg c unless otherwise noted) symbol parameter conditions ratings unit vdd supply voltage v gg <5v,z g =z l =50 ohms 17 v vgg gate bias voltage 5.5 v pin input power f= 890 - 915 mhz,z g =z l =50 ohms 10 mw po output power f= 890 - 915 mhz,z g =z l =50 ohms 20 w tc(op) operation case temperature f= 890 - 915 mhz,z g =z l =50 ohms -30 to +100 deg. c tstg storage temperature -40 to +100 deg. c note:above parameters are guaranteed independently. electrical characteristics (tc=25deg. c ,zg=zl=50 ohms unless otherwise noted) symbol parameter test conditions limits unit min max f frequency range 890 915 mhz po output power v dd =12.5v, v gg =4v, pin=2mw 13 w efficiency total efficiency v dd =12.5v, pin=2mw 35 % 2fo 2nd harmonic po=13w (v gg adjust) -30 dbc vswr in input vswr 4 - switching time tr, tf po=13w(v gg adjust), v gg : on/off vdd=12.5v, pin=2mw 2.0 micro sec - stability z g =50 ohms, v dd =10-16v, pin=1-4mw, po=0.1-20w (v gg control), load vswr < 4:1 no parasitic oscillation - - load vswr tolerance v dd =15.2v,pin=2mw,po=13w(v gg adjust) z g =50 ohms, load vswr=20:1 no degradation or destroy - above parameters, ratings, limits and conditions are subject to change . mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. keep safety first in your circuit designs! attention observe precautions for handling eletrostatic sensitive devices f
M68772 pout, efficiency vs. freq. tc=+25deg.c,pin=2mw(cw),vdd=12.5v, vgg=5v,zg=zl=50ohms 0 2 4 6 8 10 12 14 16 18 20 860 870 880 890 900 910 920 930 freq.(mhz) pout(w) 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 46.0 48.0 50.0 efficiency(%) pout eta M68772 pout,idd vs. vgg tc=+25deg.c,pin=2mw(puls),vdd=13.8v pin:duty=13%,width=10msec zg=zl=50ohms -10 -5 0 5 10 15 20 25 30 35 40 45 1.5 2.5 3.5 4.5 vgg (v) pout (dbm) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 idd(a) pout(890mhz) pout(902.5mhz) pout(915mhz) idd(890mhz) idd(902.5mhz) idd(915mhz)
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